description the gc4200 series are high speed (cathode base) pin di- odes made with high resistivity epitaxial silicon material. these diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thou- sands of device hours in high reliability systems. these devices can withstand storage temperatures from -65 to +200c and will operate over the range from -55 to +150c. all devices meet or exceed military environ- mental specifications of mil-s-19500. the gc4200 se- ries will operate with as little as +10 ma forward bias. model number breakdown voltage (i r = 10a max) v b (min) (volts) junction capacitance 1 c j -10 (max) (pf) series resistance 2 (20ma, 1 ghz) r s20 (max) (ohms) carrier lifetime (i r =6ma, if=10ma) t l (typ) (ns) thermal resistance (max) (c/w) gc4270 70 0.06 1.5 60 80 gc4271 70 0.10 1.0 60 70 GC4272 70 0.20 0.8 60 70 gc4273 70 0.30 0.7 60 60 gc4274 70 0.40 0.6 60 50 gc4275 70 0.50 0.5 60 40 gc4210 100 0.06 1.5 100 80 gc4211 100 0.10 1.0 100 70 gc4212 100 0.20 0.75 100 70 gc4213 100 0.30 0.6 100 60 gc4214 100 0.40 0.5 100 50 gc4215 100 0.50 0.35 100 40 gc4220 250 0.06 2.5 400 80 gc4221 250 0.10 2.0 400 70 gc4222 250 0.20 1.5 400 70 gc4223 250 0.30 1.0 400 60 gc4224 250 0.40 0.8 400 50 gc4225 250 0.50 0.6 400 40 ratings maximum leakage current: 0.5 m a a t 80% of minimum rated breakdown operating temperature: -55c to +150c storage temperature: -65 c t o +200 c applications the gc4200 series can be used in rf circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from uhf through ku band. switch applications include high speed switches (ecm systems), tr switches, channel or antenna selection switches (telecommunications), duplexers (radar) and digital phase shifters (phased arrays). the gc4200 series are also used as passive and active limiters for low to moderate rf power levels. attenuator type applications include amplitude modula- tors, agc attenuators, power levelers and level set attenua- high speed pin diodes the tabulated specifications above are for the style 30 package. diodes may also be available in other case styles. each type offers trade offs in series resistance, junction capacitance and carrier lifetime; the proper choice of which depends on the end application. reverse polarity diodes (nip) and higher voltage pin and nip diodes are also available. (see data sheets for gc4300, gc4400, and gc4500 series respectively.) notes: 1. capacitance is measured at 1 mhz and -10 volts. 2. resistance is measured using transmission loss techniques. 3. this series of devices is available in standard case styles 00, 15, 30, 35 and 85, plus other styles on request. electrical specifications: t a = 25c semiconductor operation 75 technology drive ? lowell, ma 01851 ? tel: 978-442-5600 ? fax: 978-937-3748 71 control devices
high speed pin diodes typical performance curves gc4270 gc4271 GC4272 gc4273 gc4275 gc4274 r series resistance - (ohms) s 100 10 1.0 .1 .01 .1 1.0 10. 100 i forward bias current - (ma) f semiconductor operation 75 technology drive ? lowell, ma 01851 ? tel: 978-442-5600 ? fax: 978-937-3748 72 control devices
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